Macquarie Semiconductor and Technology on behalf of ON Semiconductor Czech Republic s.r.o.
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Date of Manufacture: 2022-12-01
Currently Configured for: 150mm
Current Equipment Status: Available
Location of Equipment: Czech Republic
Available date: Currently Available
| Model #: | KLA Candela 8520 | |
| Serial Number: | ||
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| Description | Remarks | |
| 1 | Voltage: 208/230 +10% VAC, 1-phase | |
| 2 | Power Consumption: 1.1kVA | |
| 3 | Power frequency: 50/60Hz | |
| 4 | Maximum power: 2.3kVA | |
| 5 | Wafer Size 6 and 8” Wafer | |
| 6 | Wafer Thickness 350μm ~ 1100μm | |
| 7 | Wafer Carrier 2 FUP 6 and 8 | |
| 8 | Wafer Mapping Micro Optical Sensor | |
| 9 | SECS-GEM Interfaces | |
| 10 | CDA | |
| Pressure: 100 psi / 689 KPa (± 10% range). | ||
| Flow: 2 SCFM / 80 L/min (± 10% range). | ||
| AMC: maximum concentration of Volatile Organic Compounds (VOC) must be less than 150 ng/l. | ||
| Anions must be less than 14 ng/l. Cations must be less than 10 ng/l. | ||
| Moisture Content: less than 20 PPM at 1.0 atm, corresponding to a dewpoint of -30° Celsius (-22°F). | ||
| 11 | Vacuum | |
| Pressure: -680 mm Hg / -90 KPa (± 10% range). | ||
| Flow: 0.64 SCFM / 18 L/min (± 10% range). | ||
| 12 | The Candela 85XX uses two lasers | |
| 405 nm wavelength, 60 mW power (Class IIIb per CDRH 21CFR 1040). | ||
| 355 nm wavelength, 20 mW power (Class IIIb per CDRH 21CFR 1040). | ||
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The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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