Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, G.K. (F15)
Etch/Ash/Clean - Plasma Processing
Date of Manufacture: October 9, 2013
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: 12/9/2021
Tool is operating in clean room.
Labelled as Collateral Asset.
[Chamber A]
Chamber type:7050 Eching Chamber
Gas config. (sccm)=MFC full scale
O2(1000)/Ar 96%+CH4 4%(500)/
Cl2(300)/Ar(1000)/BCl3(300)/O2(200)/
Cl2(50)/BCl3(50)
MFC Brand: AEJ
RF Top450MHz, max 1000W
RF Btm 400KHz, max 500W
Temp Top +60~+100℃
Wall +20~+80℃
ESC +20~+50℃
[Chamber B]
Chamber type:7050 Eching Chamber
Gas config. (sccm)=MFC full scale
O2(1000)/Ar 96%+CH4 4%(500)/
Cl2(300)/Ar(1000)/BCl3(300)/O2(200)/
Cl2(50)/BCl3(50)
MFC Brand: AEJ
RF Top450MHz, max 1000W
RF Btm 400KHz, max 500W
Temp Top +60~+100℃
Wall +20~+80℃
ESC +20~+50℃
[Chamber C]
Chamber type:7050 Ashing Chamber
Gas config. (sccm)=MFC full scale
O2(5000)/H2O(1000)
RF Top13.56MHz, max 2000W
Temp Stage +250℃
[Chamber D]
Chamber type:7050 Ashing Chamber
Gas config. (sccm)=MFC full scale
O2(5000)/H2O(1000)
RF Top13.56MHz, max 2000W
Temp Stage +250℃
Pictures will be collected.
Missing or damaged parts: Not reported.
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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