Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, G.K. (F15)
Etch/Ash/Clean - Plasma Processing
Date of Manufacture: 2007
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: 4/1/2022
Tool is operating in clean room.
A HARD DISK DRIVE WILL BE REMOVED FROM TOOL.
[Chamber A]
Chamber type:Flex 45
Gas config.(sccm)=MFC full scale
C4F8(50)/CF4(200)/O2(3000)/Ar(1000)/
CO(500)/CH3F(100)/O2(30)/CHF3(100)/
O2(300)/C4F6(50)/Xe(500)/CH2F2(100)/
N2(1000)
Source 60MHz 2000W/27MHz 3000W/2MHz 5000W
Lid Temp Control ~140℃
ESC Temp Control ~60℃
[Chamber B]
Chamber type:Flex 45
Gas config.(sccm)=MFC full scale
C4F8(50)/CF4(200)/O2(3000)/Ar(1000)/
CO(500)/CH3F(100)/O2(30)/CHF3(100)/
O2(300)/C4F6(50)/Xe(500)/CH2F2(100)/
N2(1000)
Source 60MHz 2000W/27MHz 3000W/2MHz 5000W
Lid Temp Control ~140℃
ESC Temp Control ~60℃
[Chamber C]
Chamber type:Flex 45
Gas config.(sccm)=MFC full scale
C4F8(50)/CF4(200)/O2(3000)/Ar(1000)/
CO(500)/CH3F(100)/O2(30)/CHF3(100)/
O2(300)/C4F6(50)/Xe(500)/CH2F2(100)/
N2(1000)
Source 60MHz 2000W/27MHz 3000W/2MHz 5000W
Lid Temp Control ~140℃
ESC Temp Control ~60℃
Please see photos.
Missing/Broken parts not reported.
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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