Macquarie Equipment Trading on behalf of Micron Memory Japan, G.K. (F15)

Tokyo Electron Ltd. Tactras Vigus

Asset ID: 12670

Print spec sheet

Tokyo Electron Ltd.

Tactras Vigus

Dielectric Etch

Etch/Ash/Clean - Plasma Processing

Equipment details:

Date of Manufacture: May 13, 2008

Currently Configured for: 300mm

Current Equipment Status: Available

Asset HDD not included

Location of Equipment: Hiroshima, Japan

Available date: Currently Available

Tool has been de-installed and is stored in an off-site warehouse.

A Hard Disk Drive will be removed from tool.

Other missing or damaged parts: Not reported.


[Chamber A]

Chamber type:Vigus0

Gas config. (sccm)=FCS full scale

 C4F8(88.1)/C4F6(103.1)/CH2F2(57.7)/COS(43.1)

 O2(93.5)/O2(1870.5)/CHF3(188.2)/CF4(280.5)

 CO(300)/N2(500)

 Ar(1420.5)/C4F6(50.3)/C4F8(22.5)/O2(28.1)

RF HF 40.68MHz, max 2700W

RF LF 3.2MHz, max 4500W

Temp Top +30~+150℃

     Wall +30~+60℃

     ESC 0~+60℃


[Chamber B]

Chamber type:Vigus0

Gas config. (sccm)=FCS full scale

 C4F8(88.1)/C4F6(103.1)/CH2F2(57.7)/COS(43.1)

 O2(93.5)/O2(1870.5)/CHF3(188.2)/CF4(280.5)

 CO(300)/N2(500)

 Ar(1420.5)/C4F6(50.3)/C4F8(22.5)/O2(28.1)

RF HF 40.68MHz, max 2700W

RF LF 3.2MHz, max 4500W

Temp Top +30~+150℃

     Wall +30~+60℃

     ESC 0~+60℃


[Chamber C]

REMOVED


[Chamber D]

Chamber type:Vigus0

Gas config. (sccm)=FCS full scale

 C4F8(88.1)/C4F6(103.1)/CH2F2(57.7)/COS(43.1)

 O2(93.5)/O2(1870.5)/CHF3(188.2)/CF4(280.5)

 CO(300)/N2(500)

 Ar(1420.5)/C4F6(50.3)/C4F8(22.5)/O2(28.1)

RF HF 40.68MHz, max 2700W

RF LF 3.2MHz, max 4500W

Temp Top +30~+150℃

     Wall +30~+60℃

     ESC 0~+60℃


[Chamber E]

Chamber type:Vigus0

Gas config. (sccm)=FCS full scale

 C4F8(88.1)/C4F6(103.1)/CH2F2(57.7)/COS(43.1)

 O2(93.5)/O2(1870.5)/CHF3(188.2)/CF4(280.5)

 CO(300)/N2(500)

 Ar(1420.5)/C4F6(50.3)/C4F8(22.5)/O2(28.1)

RF HF 40.68MHz, max 2700W

RF LF 3.2MHz, max 4500W

Temp Top +30~+150℃

     Wall +30~+60℃

     ESC 0~+60℃


[Chamber F]

Chamber type:Vigus0

Gas config. (sccm)=FCS full scale

 C4F8(88.1)/C4F6(103.1)/CH2F2(57.7)/COS(43.1)

 O2(93.5)/O2(1870.5)/CHF3(188.2)/CF4(280.5)

 CO(300)/N2(500)

 Ar(1420.5)/C4F6(50.3)/C4F8(22.5)/O2(28.1)

RF HF 40.68MHz, max 2700W

RF LF 3.2MHz, max 4500W

Temp Top +30~+150℃

     Wall +30~+60℃

     ESC 0~+60℃

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