Macquarie Semiconductor and Technology on behalf of Macquarie Electronics USA Inc.
PECVD (Chemical Vapor Deposition)
Date of Manufacture:
Currently Configured for: To be determined
Current Equipment Status: Available
Location of Equipment: United States
Available date: Currently Available
4 CH 15 KAX
| Parameter | AMAT specification (10/5/15) | |||||||||||||
| Wafer size | 156mm x 156 mm (239cm2) substrates transported in a carrier | |||||||||||||
| Carrier size | G6 (1500mm x 1850mm) carrier capable of carrying >/=99 wafer/carrier | |||||||||||||
| G5 (1200mm x 1300mm) carrier capable of carrying >/=49 wafer/carrier | ||||||||||||||
| Handling | G6: Robot max payload 60Kg: Capable of handling 5mm graphite carrier (Carrier/wafer 24kg + EE 31Kg) >12 month lifetime for robot components | |||||||||||||
| G5: Robot max payload 50Kg: Capable of handling 5mm graphite carrier (Carrier/wafer 14kg + EE 27Kg) >12 month lifetime for robot components | ||||||||||||||
| Deposition | Amorphous silicon 40-150 angstrom on wafer | |||||||||||||
| Thru-put per system | G5: >/=70 carriers/hr - 4 chamber config, 1 process step with 144s in recipe time. | |||||||||||||
| G6: >/=70 carriers/hr - 5 chamber config, 1 process step with 221s in recipe time. | ||||||||||||||
| Thru-put per LL | G6 (TSSL): >/= 70 carrier/hr with venting time < 40sec | |||||||||||||
| G5 (TSSL): >/= 70 carrier/hr with venting time < 40sec | ||||||||||||||
| Process sequence | sequential run for i and n layer, and individual run for others | |||||||||||||
| Substrate Exit Temperature | <100C | |||||||||||||
| Base pressure | <10m Torr (AMAT's STD pump base pressure, in process chambers) | |||||||||||||
| CVD Chamber Rate of Rise | <1.0mTorr/min, AMAT STD | |||||||||||||
| Pressure control | 0.2 to 5Torr | |||||||||||||
| Deposition Requirements for a-Si layer | ||||||||||||||
| Parameter | AMAT for G5 tool | |||||||||||||
| Gas flow | SiH4(high), SiH4(low), H2(high), H2 (low), B2H6/H2, CH4, Ar, NF3, N2 | |||||||||||||
| Generator Power | Max power 3KW, plasma sustainable at the power density > 150W/m2 for 40MHz | |||||||||||||
| Deposition Temperature | 150C-300C | |||||||||||||
| Heater Temperature Uniformity | < +/-10C (AMAT STD spec, on glass w TC) | |||||||||||||
| Deposition Requirements for a-Si layer | ||||||||||||||
| Parameter | AMAT for G6 tool | |||||||||||||
| Gas flow | SiH4(high), SiH4(low), H2(high), H2 (low), PH3/H2, Ar, NF3, N2, B2H6/H2 (Total 9) | |||||||||||||
| Generator Power | Max power 5KW, plasma sustainable at the power density > 150W/m2 for 13.56MHz | |||||||||||||
| Deposition Temperature | 200-300C | |||||||||||||
| Temperature Uniformity | < +/-10C (AMAT STD spec, on glass) | |||||||||||||
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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