Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, K.K. (F15)
PECVD (Chemical Vapor Deposition)
Date of Manufacture: 2005
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: 4/14/2023
Missing or damaged parts: Fab15 confirmed there are no missing or damaged parts.
OEM | AMAT | ||
Tool Model | Producer SE | ||
Process | ARL | ||
Software Version (include revision #) | B3.7_64 | ||
System Power Rating | 200/208V AC 3-Phase for System | ||
Loading Configuration | 2 load port |
Vendor Chm Model | Chemicals / Gases Used (not to use Micron Proprietary names) | ||||
Chm/Unit Position 1 | PE SiH4 TWIN | N2,SiH4,NF3,NH3,Ar,N2O,He,N2 | |||
Chm/Unit Position 2 | PE SiH4 TWIN | N2,SiH4,NF3,NH3,Ar,N2O,He,N2 | |||
Chm/Unit Position 3 | PE SiH4 TWIN | N2,SiH4,NF3,NH3,Ar,N2O,He,N2 |
Tool: | |||
Process Unit: | Model: | ||
Controller: | N/A | ||
MFC/Pressure Unit: | UNIT/Brooks | ||
Drive Mechanisms: | N/A | ||
FOUP Opener: | TAS-300 F1(TDK) | ||
Gas System: | N/A | ||
Exhuast System: | N/A |
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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