FEI Company Helios NanoLab 460F1

Equipment details:

Date of Manufacture:

Currently Configured for: 300mm

Current Equipment Status: Available

Asset HDD not included

Location of Equipment: Hiroshima, Japan

Available date: 2/10/2021

YE - FEI Helios 460F1

Technical Specications

• electron landing voltage 20 V ... 30 kV

• ion landing voltage 500 V . . . 30 kV

• electron beam current ≤ 0.1 µA

• ion beam current ≤ 65 nA

• electron source Schottky thermal eld emitter

• resolution optimal WD (SEM) @ 2 . . . 15 kV < 0.6 nm

• resolution optimal WD (SEM) @ 1 kV < 0.7 nm

• resolution optimal WD (SEM) @ 200 V with beam deceleration < 1.5 nm

• resolution (STEM) < 0.6 nm

• ion source Gallium liquid metal

• resolution (FIB) 30 kV < 4 nm

• resolution (EDX) < 30 nm

Specimen Stages

• Flipstage 3 with in situ STEM 3 detector

• 5 axis all piezo motorised

• 100 mm XY motion

• IGT-Loadlock

• Quick Loader

CONFIGURATION DETAILS:

· Electron source

- Schottky thermal field emitter, over 1 year lifetime

· Ion source

- Gallium liquid metal, 1000 hours

· Landing voltage

- 20 V – 30 kV SEM

- 500 V – 30 kV FIB

· SEM resolution

- Optimal WD

0.6 nm @ 2–15 kV

0.7 nm @ 1 kV

1.5 nm @ 200 V with beam decleration

- Coincident WD

0.8 nm @ 15 kV

1.2 nm @ 1 kV

·FIB resolution coincident WD

- 4.0 nm @ 30 kV using preferred statistical method

- 2.5 nm @ 30 kV using selective edge method

· In situ TEM sample liftout

- EasyLift EX Nanomanipulator

· Stage

- 5 axis all piezo motorized

- 100 mm XY motion

- QuickFlip shuttle

- Automated loadlock

· Sample types

- Wafer pieces, packaged parts,

TEM

- Grids, whole wafers up to 100 mm

· Max. sample size

- 100 mm diameter with full travel

· User interface

- Windows® 7 GUI with integrated SEM, FIB, GIS, simultaneous patterning and imaging mode

- Two 24-inch widescreen LCD

monitors

 Beam chemistry

- MultiChem Gas Delivery System(Pt, W, Carbon, TEOS)

All items on desks in the photo are included in tool.