Macquarie Semiconductor and Technology on behalf of Micron Technology Taiwan, Inc. (F11)

Tokyo Electron Ltd. (TEL) Trias Ti/TiN

Asset ID: 55301

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Tokyo Electron Ltd. (TEL)

Trias Ti/TiN

Metal CVD (Chemical Vapor Deposition)

Deposition Equipment

Equipment details:

Date of Manufacture: 2007

Currently Configured for: 300mm

Current Equipment Status: Available

Asset HDD not included

Location of Equipment: Taoyuan, Taiwan

Available date: Currently Available


Tool config is based on original PO, please verify tool details at tool inspection


Chamber Qty:3


Basic System 

TM Robot: BX80-070464-11, PICK,ARM,300MM C..BR931072 (BX9507046411 (YASKAWA)

Loader Robot: BX80-000335-11, Type:LOADER ARM,CART..SBX92105903 (SHINKO)

Loader Robot Controller: BX80-000341-11, Type:CONTROLLER..SBX92304875 (SHINKO)

Dummy Port operation: Yes

Pyro,Inner: 3M87-062305-1 SENSOR ASSY,PYRO INNER W

Pyro,Outer: 3M87-062306-1 SENSOR ASSY,PYRO OUTER W

Process position: TRIAS SFD-W/SFD-W/SFD-W/SFD-W

Process capability: TRIAS SFD-W


System Software

Software Revision: V3.690R1

WaferCarryingOut: V3.690R1

CassetteJobEventEnd: V3.690R1

Process Software Revision: V3.690R1


Factory Interface System

Carrier: FOUP 25 slots cassette

Number of Load Port: 3 ( BOLTS-M)

Loader arm: Dual arm type /Taper pick

Mini-environment FFU filter: Daikin ULPA 0.1um

The number of LLM: 2

LLM bleed gas: N2

Carrier ID reader: OMRON V640-HAM11

Abatement Interface Kit: Dual type abatement


Transfer, Vaccuum, Exhaust, Cooling Water Systems

Transfer arm: Twin pick type

TM bleed gas: N2

The number of Aligner: Q'ty:1 (Located in LM)

Power Fail Endurance: NA

Pressure sensor: INFICON VSA100A

Pirani gauge (ATM switch): LEYBOLD TTR211S

Capacitance Manometer: MKS 626A02TDE

LLM1/LLM2-Door valve: SMC CBM2B40-N4640-90

LLM1/LLM2-Gate valve: V TEX I-I-00078-2-01

Flowmeter: Tokyo Flow Meter FF-MOA80-21


Remote Units

PM Dry Pump: EBARA ESR201WN

Divert Dry Pump: None

chiller: RKE3750B-VW-G1-SP


Chamber TEL TRIAS W

6.65pa capacitance gauge: MKS 627BU5TBD1B

13.33kpa capacitance gauge: MKS 626B12TBE

103kpa capacitance gauge: PURERON PC-302A-VR-15A-M

Gate Valve (Slit Valve): V TEX : IRF-07084-2-01

APC Valve: Fuji Imvac HV-50N

Vacuum valve(VEP1): SMC XLA-50A-M9NA

Pressure Gauge, exhaust system: SUNX DP-M2


Gas Box Configuration

MFC (Massflow controller) 1: MFC1 Hitachi-Metal SFC1470FAPDMC-4UGL WF6 150/450sccm

MFC (Massflow controller) 2: MFC2 Hitachi-Metal SFC1471FAMC-4UGLN ClF3 1000sccm

MFC (Massflow controller) 3: MFC3 Hitachi-Metal SFC1481FAMC-4UGL Ar-1 7000sccm

MFC (Massflow controller) 4: MFC4 Hitachi-Metal SFC1480FAPDMC-4UGL SiH4 200/800sccm

MFC (Massflow controller) 5: MFC5 Hitachi-Metal SFC1481FAPDMC-4UGL H2 2000/6000sccm

MFC (Massflow controller) 6: MFC6 Hitachi-Metal SFC1480FAMC-4UGL N2 2000sccm

MFC (Massflow controller) 7: MFC7 Hitachi-Metal SFC1481FAMC-4UGL Ar 7000sccm

MFC (Massflow controller) 8: MFC8 Hitachi-Metal SFC1480FAPDMC-4UGL H2 1000/3000sccm

MFC (Massflow controller) 9: None


Kit Parts: 

Halogen lamp: MB3M46-000002-11, LAMP,TUNG HALOGEN..JID100V-500W/N 

Clamp Ring: Clamp Ring 3M10-151169-11 CLAMP RING,OL2 TP5 TP10"


Chamber Kit

O-ring(Gas Inlet): 027-001031-1 Qty 3

Pyro meter(IN): MB3M87-040480-13 Qty 1

Pyro meter(OUT): MB3M87-040481-13 Qty 1

Tefron washer: 3M10-407223-12 Qty 1

O-RING(Showerhead 1): AS568A-280-8900 Qty 1

O-RING(Showerhead 2): AS568A-224-8900 Qty 2

O-RING(Showerhead 3): AS568A-278-8900 Qty 1

O-RING(Showerhead 4): AS568A-205-8900 Qty 1

O-RING(G/V): AS568A-372-8900 Qty 1

Clamp Ring: 3M10-151169-11 Qty 1

Attachment: MB3M10-101458-12 Qty 1

Lamp: MB3M46-000004-11 Qty 1


Damage/Missing parts list

Please inspect tool to reconfirm

Dry pumps and customer provided items not included on sales


Triase+™ Ti/TiN is a 300mm single-wafer metal CVD system for high step coverage Ti/TiN film formation using TiCl4. Based on TEL's industry-proven Trias™ platform, since its introduction, the system provides low contact resistance film process while reducing contact leakage of various devices. Especially in high-aspect-ratio contact hole, Triase+™ SFD™ TiN has been widely adopted by using SFD™ technology that has both merits of excellent step coverage of ALD and high productivity of CVD. The Triase+™HP Ti, single-wafer metal CVD system, accommodates a lot of additional functions such as optimized surface treatments by unique showerhead gas dispersion module and simultaneous TiSix formation technology during Ti deposition. Furthermore the system provides widen temperature control range, lower particle level and higher productivity. Its unique technology addresses the various process requirements of metal deposition that having the structure such as ultra-shallow junction and nickel silicide contacts. As a successor model, Triase+™ HP Ti Plus, which allows higher step coverage for next generation devices, has also been added to the product lineup.

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