Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, K.K. (F15)
Date of Manufacture:
Currently Configured for: To be determined
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: 9/14/2023
No pictures provided. Please inspect to confirm.
Other Missing or damaged parts: Not reported. Please inspect to confirm.
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Triase+™ Ti/TiN is a 300mm single-wafer metal CVD system for high step coverage Ti/TiN film formation using TiCl4. Based on TEL's industry-proven Trias™ platform, since its introduction, the system provides low contact resistance film process while reducing contact leakage of various devices. Especially in high-aspect-ratio contact hole, Triase+™ SFD™ TiN has been widely adopted by using SFD™ technology that has both merits of excellent step coverage of ALD and high productivity of CVD. The Triase+™HP Ti, single-wafer metal CVD system, accommodates a lot of additional functions such as optimized surface treatments by unique showerhead gas dispersion module and simultaneous TiSix formation technology during Ti deposition. Furthermore the system provides widen temperature control range, lower particle level and higher productivity. Its unique technology addresses the various process requirements of metal deposition that having the structure such as ultra-shallow junction and nickel silicide contacts. As a successor model, Triase+™ HP Ti Plus, which allows higher step coverage for next generation devices, has also been added to the product lineup.
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