Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, G.K. (F15)
HDP CVD (Chemical Vapor Deposition)
Date of Manufacture: 2005
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: 12/31/2021
CVD 15-3AMAT_CENT3_HDPC AMAT
A Hard Disk Drive will be removed from tool.
Other missing or damaged parts: Not reported.
[Chamber A]
Chamber Type:Ultima X HDP CVD
Gas Config(sccm)=MFC Full Scale
O2(1000)/NF3(100)/He(600)/SiH4((300)/H2(1000)/AR(1000)/H2(1000)/SiH4(50)/He(400)/NF3(200)/NF3(3000)/AR(3000)
RF Source 1.8-2.17MHz, max 10000 W
RF Bias 13.56MHz, max 9500W
RF RPS 400kHz, max 6000W
[Chamber B]
Chamber Type:Ultima X HDP CVD
Gas Config(sccm)=MFC Full Scale
O2(1000)/NF3(100)/He(600)/SiH4((300)/H2(1000)/AR(1000)/H2(1000)/SiH4(50)/He(400)/NF3(200)/NF3(3000)/AR(3000)
RF Source 1.8-2.17MHz, max 10000 W
RF Bias 13.56MHz, max 9500W
RF RPS 400kHz, max 6000W
[Chamber C]
Chamber Type:Ultima X HDP CVD
Gas Config(sccm)=MFC Full Scale
O2(1000)/NF3(100)/He(600)/SiH4((300)/H2(1000)/AR(1000)/H2(1000)/SiH4(50)/He(400)/NF3(200)/NF3(3000)/AR(3000)
RF Source 1.8-2.17MHz, max 10000 W
RF Bias 13.56MHz, max 9500W
RF RPS 400kHz, max 6000W
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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