Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, G.K. (F15)
Etch/Ash/Clean - Plasma Processing
Date of Manufacture: 2007
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: 3/4/2022
DRY ETCH 15-3HITA_7050_AL_02 HITACHI U7050
A Hard Disk Drive will be removed from tool.
Other missing or damaged parts: Not reported.
[Chamber A]
Chamber type:7050 Eching Chamber
Gas config. (sccm)=MFC full scale
O2(1000)/Ar 96%+CH4 4%(500)/
Cl2(300)/Ar(1000)/BCl3(300)/O2(200)/
Cl2(50)/BCl3(50)
MFC Brand: AEJ
RF Top450MHz, max 900W
RF Btm 400KHz, max 450W
Temp Top +60~+100℃
Wall +20~+80℃
ESC +20~+50℃
[Chamber B]
Chamber type:7050 Eching Chamber
Gas config. (sccm)=MFC full scale
O2(1000)/Ar 96%+CH4 4%(500)/
Cl2(300)/Ar(1000)/BCl3(300)/O2(200)/
Cl2(50)/BCl3(50)
MFC Brand: AEJ
RF Top450MHz, max 900W
RF Btm 400KHz, max 450W
Temp Top +60~+100℃
Wall +20~+80℃
ESC +20~+50℃
[Chamber C]
Chamber type:7050 Ashing Chamber
Gas config. (sccm)=MFC full scale
O2(5000)/H2O(1000)
RF Top13.56MHz, max 1900W
Temp Stage +250℃
[Chamber D]
Chamber type:7050 Ashing Chamber
Gas config. (sccm)=MFC full scale
O2(5000)/H2O(1000)
RF Top13.56MHz, max 1900W
Temp Stage +250℃
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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