Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, G.K. (F15)
Etch/Ash/Clean - Plasma Processing
Date of Manufacture:
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: Currently Available
Tool has been de-installed and is stored in an off-site warehouse.
No photos provided. Please inspect to collect photos.
[Chamber A]
Chamber type:DPS2 G1
Gas config.(sccm)=MFC full scale
BCL3(200）/CL2（200）/O2(50)/N2（50）/
SF6（300）/CHF3（50）/CF4（200）/AR（200）
Source 13.56MHz, max 3000 W
Bias 13.56MHz Hz, max 1500 W
Lid Temp Control ~95℃
ESC Temp Control ~85℃
[Chamber B]
Chamber type:DPS2 G1
Gas config.(sccm)=MFC full scale
BCL3(200）/CL2（200）/O2(50)/N2（50）/
SF6（300）/CHF3（50）/CF4（200）/AR（200）
Source 13.56MHz, max 3000 W
Bias 13.56MHz Hz, max 1500 W
Lid Temp Control ~95℃
ESC Temp Control ~85℃
[Chamber C]
Chamber type:ASP
Gas config.(sccm)=MFC full scale
CF4（50）/O2(10000）/N2（1000）
H2O Vapor 3000sccm
Power max 3000 W
[Chamber D]
Chamber type:ASP
Gas config.(sccm)=MFC full scale
CF4（50）/O2(10000）/N2（1000）
H2O Vapor 3000sccm
Power max 3000 W
Other Missing/Broken Parts: Not reported.
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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