Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, K.K. (F15)
Endura II Aluminum Interconnect
PVD (Physical Vapor Deposition)
Date of Manufacture:
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: Currently Available
PVD 15-3AMAT_ENDURA2_REFLOW_01 AMAT ENDURA 2 REFLOW
AMAT |
ENDURA2 |
Metal (Al) |
eentB4.9_40 |
400VAC,3phase
STAR 208VAC,3phase STAR |
3 Load Ports |
Vendor Chm Model | Chemicals / Gases Used (not to use Micron Proprietary names) | ||||
Chm/Unit Position 1 | SIP-TTN | Ar/N2 | |||
Chm/Unit Position 2 | ALPS-Al | Ar/N2 | |||
Chm/Unit Position 3 | Hot-Al | Ar/N2 | |||
Chm/Unit Position 4 | Hot-Al | Ar/N2 | |||
Chm/Unit Position 5 | SIP-TTN | Ar/N2 | |||
Chm/Unit Position E | Degas | N2 | |||
Chm/Unit Position F | Degas | N2 |
No missing or damaged parts.
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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