Macquarie Semiconductor and Technology on behalf of Micron Memory Taiwan Co., Ltd. (F16)
Metal CVD (Chemical Vapor Deposition)
Date of Manufacture: 2007
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Taichung City, Taiwan
Available date: Currently Available
Completed tool with Chamber Qty: 4
Chamber type TI HP- Qty1
Chamber type TIN- Qty3
Reference :
Triase+™ Ti/TiN is a 300mm single-wafer metal CVD system for high step coverage Ti/TiN film formation using TiCl4. Based on TEL's industry-proven Trias™ platform, since its introduction, the system provides low contact resistance film process while reducing contact leakage of various devices. Especially in high-aspect-ratio contact hole, Triase+™ SFD™ TiN has been widely adopted by using SFD™ technology that has both merits of excellent step coverage of ALD and high productivity of CVD. The Triase+™HP Ti, single-wafer metal CVD system, accommodates a lot of additional functions such as optimized surface treatments by unique showerhead gas dispersion module and simultaneous TiSix formation technology during Ti deposition. Furthermore the system provides widen temperature control range, lower particle level and higher productivity. Its unique technology addresses the various process requirements of metal deposition that having the structure such as ultra-shallow junction and nickel silicide contacts. As a successor model, Triase+™ HP Ti Plus, which allows higher step coverage for next generation devices, has also been added to the product lineup.
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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