Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, K.K. (F15)
Etch/Ash/Clean - Plasma Processing
Date of Manufacture: 2010
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: Currently Available
Tool has been de-installed and is stored in an off-site warehouse.
Shipping brackets and kits will need to be supplied by the buyer.
No shipping kits have been installed on the tool.
Load ports: 2 each
Serial number F123737 in SN plate on Process Chamber 3.
Serial number F123739 in SN Plate on Process Chamber 1.
Serial number on Process Chamber 2: Unknown.
A HARD DISK DRIVE WILL BE REMOVED FROM TOOL.
[Chamber A]
Chamber type:Flex EX
Gas config.(sccm)=MFC full scale
C4F8(50)/CF4(200)/O2(3000)/Ar(1000)/
CO(500)/CH3F(100)/O2(30)/CHF3(100)/
O2(300)/C4F6(50)/Xe(500)/CH2F2(100)/
N2(1000)/COS(30)
Source 60MHz 2000W/27MHz 3000W/2MHz 7000W
Lid Temp Control ~140℃
ESC Temp Control ~60℃
[Chamber B]
Chamber type:Flex EX
Gas config.(sccm)=MFC full scale
C4F8(50)/CF4(200)/O2(3000)/Ar(1000)/
CO(500)/CH3F(100)/O2(30)/CHF3(100)/
O2(300)/C4F6(50)/Xe(500)/CH2F2(100)/
N2(1000)/COS(30)
Source 60MHz 2000W/27MHz 3000W/2MHz 7000W
Lid Temp Control ~140℃
ESC Temp Control ~60℃
[Chamber C]
Chamber type:Flex EX
Gas config.(sccm)=MFC full scale
C4F8(50)/CF4(200)/O2(3000)/Ar(1000)/
CO(500)/CH3F(100)/O2(30)/CHF3(100)/
O2(300)/C4F6(50)/Xe(500)/CH2F2(100)/
N2(1000)/COS(30)
Source 60MHz 2000W/27MHz 3000W/2MHz 7000W
Lid Temp Control ~140℃
ESC Temp Control ~60℃
Equipment is missing all tube controller parts are missing.
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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