Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, G.K. (F15)
Etch/Ash/Clean - Plasma Processing
Date of Manufacture:
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: Currently Available
WET - 15-3CAN_SUP_STR_HM - SURP320 -
A HARD DISK DRIVE WILL BE REMOVED FROM TOOL.
Other missing or damaged parts: Not reported.
Photos will be provided.
[Process Chamber 1]
Chamber type : Asher
Gas config. (sccm) = MFC full scale
CF4(100)、H2/N2(2000)、O2(200)、O2(5000)
MW 2.45GHz, Max 5000W
Stage Material : Al + Al2O3
Stage Heater max 300Ｃ
Dielectric Substance : Y2O3
[Process Chamber 2]
Chamber type : Asher
Gas config. (sccm) = MFC full scale
CF4(100)、H2/N2(2000)、O2(200)、O2(5000)
MW 2.45GHz, Max 5000W
Stage Material : Al + Al2O3
Stage Heater max 300Ｃ
Dielectric Substance : Y2O3
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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