Macquarie Semiconductor and Technology on behalf of Macquarie (Asia) Pte Ltd. Taiwan Branch

Tokyo Electron Ltd. (TEL) Trias Ti/TiN

Asset ID: 30180

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Tokyo Electron Ltd. (TEL)

Trias Ti/TiN

Metal CVD (Chemical Vapor Deposition)

Deposition Equipment

Equipment details:

Date of Manufacture: 2007

Currently Configured for: 300mm

Current Equipment Status: Available

Location of Equipment: Taoyuan City, Taiwan

Available date: Currently Available

Tool is configed with chamber Qty 4

Ti (PM1/PM3) TiN (PM2/PM4)

Basic System (TEL Trias) Tool ID: DBT106(TTTRL2E500)

Chamber Position: F16 Warehouse

Chamber Process type: SFD Ti / TiN


Gas Supply Config

Manual valve N*: Yes

Regulator (N2-1/N2-2): Yes

Regulator (N2-PF): Yes

Regulator (Ar): Yes

Pressure sensor (All gas line): No

Filter (N2-PF): No

Manual valve (Dry air line): Yes

Filter (Dry air line): No

Regulator (Dry air line): No

Pressure sensor (Dry air line): No

Pressure gauge (Dry air line): No


Chamber TEL TRIAS TIN

1333Pa Manometor: Yes

133kPa Capacitance manometer: Yes

O-rings: Yes

O-rings: Yes

O-rings, Cubic Trap I/O: Yes

Gate Valve (Slit Valve): Yes

APC Valve: Yes

Cubic Trap: Yes

Vacuum valve(VEP1): Yes

Vacuum valve(VEP2,3): Yes

Pressure Gauge, exhaust system: Yes

Flow Meter for cooling water: No

Water Leak Sensor: Yes


Gas Box Configuration

Gas Stick 1: Yes

Gas Stick 2: Yes

Gas Stick 3: Yes

Gas Stick 4: Yes

Gas Stick 5: Yes

Gas Stick 6: Yes

Gas Stick 7: Yes

Gas Stick 8: Yes

DLI: Yes

Heater Bottom Purge: Yes

Air Operation Valves: Yes

Gas Filters: Yes

Regulators: Yes

Gas lockout system: Yes


Kit Parts: 

STAGE HEATER ASSY,ELPR STG HTR Ver2.4: Yes ( Ver2.5)

TiN Shower Base: Yes

"Inludes PLATE SHOWER SPACER 300TIN S1, PLATE SHOWER HEAD 300TIN, BLOCK GAS DIFFUSION, SCREW LONG HEAD M6X15, SCREW M6X28, SPRING WASHER SPAK M6, TUBE GAS INLET 300TIN, WASHER FLAT..M6 MA22 RGLR:

Ti Shower Head

Ti Quartz Filler

TiN Shower Plate

TiN Shower Block"


Triase+™ Ti/TiN is a 300mm single-wafer metal CVD system for high step coverage Ti/TiN film formation using TiCl4. Based on TEL's industry-proven Trias™ platform, since its introduction, the system provides low contact resistance film process while reducing contact leakage of various devices. Especially in high-aspect-ratio contact hole, Triase+™ SFD™ TiN has been widely adopted by using SFD™ technology that has both merits of excellent step coverage of ALD and high productivity of CVD. The Triase+™HP Ti, single-wafer metal CVD system, accommodates a lot of additional functions such as optimized surface treatments by unique showerhead gas dispersion module and simultaneous TiSix formation technology during Ti deposition. Furthermore the system provides widen temperature control range, lower particle level and higher productivity. Its unique technology addresses the various process requirements of metal deposition that having the structure such as ultra-shallow junction and nickel silicide contacts. As a successor model, Triase+™ HP Ti Plus, which allows higher step coverage for next generation devices, has also been added to the product lineup.

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The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.


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