Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, G.K. (F15)

Applied Materials (AMAT) Centura AP DPS II Metal

Asset ID: 11140

Print spec sheet

Applied Materials (AMAT)

Centura AP DPS II Metal

Metal Etch

Etch/Ash/Clean - Plasma Processing

Equipment details:

Date of Manufacture:

Currently Configured for: 300mm

Current Equipment Status: Available

Asset HDD not included

Location of Equipment: Hiroshima, Japan

Available date: Currently Available

No shipping kits have been installed on tool.


No photos provided since tool has been de-installed and is stored in an off-site warehouse. Please inspect to collect photos.

Missing parts: Fab15 confirmed Qty 2 of RING,SINGLE STD CERAMIC (consumable items) are missing.

No other missing or damaged parts. Fab15 confirmed it.


Tool is configured with endpoint.


[Chamber A] 

Chamber type:DPS2 G1

Gas config.(sccm)=MFC full scale

BCL3(200)/CL2(200)/O2(50)/N2(50)/

SF6(300)/CHF3(50)/CF4(200)/AR(400)

Source 13.56MHz, max 3000 W

Bias 13.56MHz Hz, max  1500 W

Lid Temp Control ~95℃

ESC Temp Control ~85℃


[Chamber B]

Chamber type:DPS2 G1

Gas config.(sccm)=MFC full scale

BCL3(200)/CL2(200)/O2(50)/N2(50)/

SF6(300)/CHF3(50)/CF4(200)/AR(400)

Source 13.56MHz, max 3000 W

Bias 13.56MHz Hz, max  1500 W

Lid Temp Control ~95℃

ESC Temp Control ~85℃


[Chamber C]

Chamber type:ASP

Gas config.(sccm)=MFC full scale

CF4(50)/O2(10000)/N2(1000)

H2O Vapor 3000sccm

Power max 3000 W


[Chamber D]

Chamber type:ASP

Gas config.(sccm)=MFC full scale

CF4(50)/O2(10000)/N2(1000)

H2O Vapor 3000sccm

Power max 3000 W

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The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.


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