Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, G.K. (F15)
Etch/Ash/Clean - Plasma Processing
Date of Manufacture: June 27, 2003
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: Currently Available
DRY ETCH 15-3TEL_TLUDRM_OX_02 TEL TLUDRM OX
Tool has been de-installed and is stored in an off-site warehouse.
No missing or damaged parts reported by Fab15.
[Chamber A]
Chamber type:DRM
Gas config. (sccm)=FCS full scale
2line(advanced radical distribution control)
Ar(754)/C4F8(43)/O2(46.8)/O2(1215)
CF4(336)/CHF3(163)/CH2F2(144)/N2(300)
CHF3(25.1)/O2(18.7)/N2(30)/CH2F2(14.4)
RF 13.56MHz, max 5000W
Temp Top +30~+80?
Wall +40~+80?
ESC -10~+60?
[Chamber A]
Chamber type:DRM
Gas config. (sccm)=FCS full scale
2line(advanced radical distribution control)
Ar(754)/C4F8(43)/O2(46.8)/O2(1215)
CF4(336)/CHF3(163)/CH2F2(144)/N2(300)
CHF3(25.1)/O2(18.7)/N2(30)/CH2F2(14.4)
RF 13.56MHz, max 5000W
Temp Top +30~+80?
Wall +40~+80?
ESC -10~+60?
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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