Macquarie Semiconductor and Technology on behalf of Micron Memory Japan, K.K. (F15)
Etch/Ash/Clean - Plasma Processing
Date of Manufacture: Jul., 2005
Currently Configured for: 300mm
Current Equipment Status: Available
Asset HDD not included
Location of Equipment: Hiroshima, Japan
Available date: 1/13/2023
Tool is operating in clean room.
MISSING OR DAMAGED PARTS: FAB15 CONFIRMED TEHRE WERE NO MISSING OR DAMAGED PARTS.
TOOL WAS UPGRADED FROM SURPASS 300 TO SURPASS 320.
[Chamber A]
Chamber type:Asher
Gas config. (sccm)=MFC full scale
H2/N2(2000),O2(5000)
MW 2.45GHz, max 5000W
Stage Material:Ceramic
Stage Heater max 300Ｃ
Dielectric Substance:Al + Al2O3
[Chamber B]
Chamber type:Asher
Gas config. (sccm)=MFC full scale
H2/N2(2000),O2(5000)
MW 2.45GHz, max 5000W
Stage Material:Ceramic
Stage Heater max 300Ｃ
Dielectric Substance:Al + Al2O3
The information referenced on this page is accurate to the best of our knowledge. We do not warrant the completeness or accuracy of the information contained herein. Interested parties are encouraged to request inspection to verify equipment condition, configuration, and completeness. Any offer to purchase equipment shall be subject to our standard terms and conditions of sale.
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