Macquarie Semiconductor and Technology on behalf of Macquarie Electronics USA Inc.

Applied Materials AKT AKT Applied G6 PECVD 5.7

Asset ID: 208594

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Applied Materials AKT

AKT Applied G6 PECVD 5.7

PECVD (Chemical Vapor Deposition)

Deposition Equipment

Equipment details:

Date of Manufacture: 2016

Currently Configured for: To be determined

Current Equipment Status: Available

Location of Equipment: United States

Available date: Currently Available

5 CH. 25 KAX


ParameterAMAT specification (10/5/15)
Wafer size156mm x 156 mm (239cm2) substrates transported in a carrier
Carrier sizeG6 (1500mm x 1850mm) carrier capable of carrying >/=99 wafer/carrier
G5 (1200mm x 1300mm) carrier capable of carrying >/=49 wafer/carrier
HandlingG6: Robot max payload 60Kg: Capable of handling 5mm graphite carrier (Carrier/wafer 24kg + EE 31Kg)  >12 month lifetime for robot components
G5: Robot max payload 50Kg: Capable of handling 5mm graphite carrier (Carrier/wafer 14kg + EE 27Kg)  >12 month lifetime for robot components 
DepositionAmorphous silicon 40-150 angstrom on wafer
Thru-put per systemG5: >/=70 carriers/hr - 4 chamber config, 1 process step with 144s in recipe time.
G6: >/=70 carriers/hr - 5 chamber config, 1 process step with 221s in recipe time.
Thru-put per LLG6 (TSSL): >/= 70 carrier/hr with venting time < 40sec
G5 (TSSL): >/= 70 carrier/hr with venting time < 40sec
Process sequencesequential run for i and n layer, and individual run for others
Substrate Exit Temperature<100C
Base pressure<10m Torr (AMAT's STD pump base pressure, in process chambers)
CVD Chamber Rate of Rise<1.0mTorr/min,  AMAT STD
Pressure control0.2 to 5Torr
Deposition Requirements for a-Si layer
ParameterAMAT for G5 tool
Gas flowSiH4(high), SiH4(low), H2(high), H2 (low), B2H6/H2, CH4, Ar, NF3, N2
Generator PowerMax power 3KW, plasma sustainable at the power density > 150W/m2 for 40MHz 
Deposition Temperature150C-300C
Heater Temperature Uniformity< +/-10C (AMAT STD spec, on glass w TC)
Deposition Requirements for a-Si layer
ParameterAMAT for G6 tool
Gas flowSiH4(high), SiH4(low), H2(high), H2 (low), PH3/H2, Ar, NF3, N2, B2H6/H2 (Total 9)
Generator PowerMax power 5KW, plasma sustainable at the power density > 150W/m2 for 13.56MHz 
Deposition Temperature200-300C
Temperature Uniformity< +/-10C (AMAT STD spec, on glass)


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